Abstract: The drain-side slew rate [dV/dt] enhanced hot carrier injection (HCI) of the n-type lateral double-diffused MOSFET (n-LDMOS) under dynamic drain stress conditions is experimentally ...
Abstract: Partial discharge (PD) due to high dv/dt pulsewidth modulation has been identified as one of the leading causes of insulation failure in low voltage (LV) variable frequency drive (VFD) fed ...
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