Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...

The multi-technique physical vapor deposition system designed at Oregon State University incorporates electron beam, sputter and thermal deposition in one chamber. Cutting-edge research into thin-film ...

What is Auger Electron Spectroscopy (AES)? Analyzing the features of various types of substrates involves the application of the essential analytical technique known as Auger Electron Spectroscopy ...

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...